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| Datasheet File OCR Text: |
| NTE472 Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz Description: The NTE472 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator applications in military, mobile marine and citizens band equipment. Suitable for use as output driver or pre-driver stages in VHF and UHF equipment. Features: D Specified 12.5 Volt, 175MHz Characteristics: Output Power = 1.75 Watts Minimum Gain = 11.5dB Efficiency = 50% D Characterized through 225MHz Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.33A Total Device Dissipation (TC = +75C , Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5W Derate Above 75C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as a class B or C RF amplifier. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO IC = 25mA, IB = 0 V(BR)CES IC = 25mA, VBE = 0 Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)EBO IC = 0.5mA, IC = 0 ICEO VCE = 10V, IB = 0 16 36 3.5 - - - - - - - - 0.3 V V V mA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Functional Test Common-Emitter Amplifier Power Gain Collector Efficiency GPE POUT = 1.75W, VCC = 12.5V, f = 175MHz 11.5 50 - - - - dB % Cob VCB = 12V, IE = 0, f = 1MHz - - 15 pF hFE VCE = 5V, IC = 50mA 20 - 150 Symbol Test Conditions Min Typ Max Unit .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Emitter Collector/Case 45 .031 (.793) |
Price & Availability of NTE472
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